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| STB22NS25Z - STP22NS25Z N-channel 250V - 0.13 - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAYTM Power MOSFET General features Type STB22NS25Z STP22NS25Z VDSS 250V 250V RDS(on) <0.15 <0.15 ID 22A 22A 3 100% avalanche tested Extremely high dv/dt capability TO-220 1 2 3 1 DPAK Description Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications. Internal schematic diagram Applications Switching application Order codes Part number STB22NS25Z STP22NS25Z Marking B22NS25Z P22NS25Z Package DPAK TO-220 Packaging Tape & reel Tube June 2006 Rev 2 1/14 www.st.com 14 Contents STB22NS25Z - STP22NS25Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 STB22NS25Z - STP22NS25Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuos) at TC = 25C Drain current (continuos) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 250 250 20 22 13.9 88 135 1.07 2500 5 -55 to 150 Max. operating junction temperature Unit V V V A A A W W/C V V/ns C PTOT VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) dv/dt (2) Peak diode recovery voltage slope Storage temperature Tstg Tj 1. Pulse width limited by safe operating area 2. ISD < 22A, di/dt < 200A/s, VDD = 80% V(BR)DSS Table 2. Thermal data 0.93 62.5 300 C/W C/W C Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche Characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V, Rg = 47) Max value 22 350 Unit A mJ 3/14 Electrical characteristics STB22NS25Z - STP22NS25Z 2 Electrical characteristics (Tcase =25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125C VGS = 18V VDS = VGS, ID = 250A VGS = 10V, ID = 11A 2 3 0.13 Min. 250 10 100 10 4 0.15 Typ. Max. Unit V A A A V Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID = 11A Min. Typ. 22 2400 340 120 108 11 40 151 Max. Unit S pF pF pF nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 200V, ID = 20A, VGS = 10V (see Figure 13) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 4/14 STB22NS25Z - STP22NS25Z Electrical characteristics Table 6. Symbol td(on) tr td(Voff) tf tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off- delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 125V, ID = 11A RG = 4.7 VGS = 10V (see Figure 12) VDD = 125V, ID = 11 A, RG = 4.7, VGS = 10V (see Figure 12) Vclamp = 200V, ID = 22 A, RG = 4.7, VGS = 10V (see Figure 12) Min. Typ. 20 30 100 78 37 65 110 Max Unit ns ns ns ns ns ns ns Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, VGS = 0 ISD = 22 A, di/dt = 100A/s VDD = 50V, Tj = 150C (see Figure 17) 292 3065 21 Test conditions Min. Typ. Max. Unit 22 88 1.6 A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 500A (open drain) Min 20 Typ Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components 5/14 Electrical characteristics STB22NS25Z - STP22NS25Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14 STB22NS25Z - STP22NS25Z Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/14 Test circuits STB22NS25Z - STP22NS25Z 3 Test circuits Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/14 STB22NS25Z - STP22NS25Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB22NS25Z - STP22NS25Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/14 STB22NS25Z - STP22NS25Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 11/14 Packaging mechanical data STB22NS25Z - STP22NS25Z 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 STB22NS25Z - STP22NS25Z Revision history 6 Revision history Table 9. Date 06-Jun-2006 Revision 2 New template Changes 13/14 STB22NS25Z - STP22NS25Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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